Features Features Features Features Features
?UltraFast:  Optimized for high operating
   frequencies 8-40 kHz in hard switching, >200
  kHz in resonant mode
?Generation 4 IGBT design provides tighter
  parameter distribution and higher efficiency than
  Generation 3
?Industry standard TO-247AC package
?Generation 4 IGBT's offer highest efficiency available
?IGBT's optimized for specified application conditions
?Designed to be a "drop-in" replacement for equivalent
   industry-standard Generation 3 IR IGBT's
Benefits

Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
IC @ TC = 25癈 Continuous Collector Current 23
IC @ TC = 100癈 Continuous Collector Current 12 A
ICM Pulsed Collector Current
92
ILM Clamped Inductive Load Current   92
VGE Gate-to-Emitter Voltage ?20 V
EARV Reverse Voltage Avalanche Energy  10 mJ
PD @ TC = 25癈 Maximum Power Dissipation 100
PD @ TC = 100癈 Maximum Power Dissipation 42
TJ Operating Junction and -55  to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
癈
Mounting torque, 6-32 or M3 screw. 10 lbf昳n (1.1N昺)
Absolute Maximum Ratings
W

Parameter Typ. Max. Units
R鐹C Junction-to-Case 枛?1.2
R鐲S Case-to-Sink, Flat, Greased Surface 0.24 枛?癈/W
R鐹A Junction-to-Ambient,  typical socket mount 枛?40
Wt Weight 6 (0.21) 枛?g (oz)
Thermal Resistance