FEATURES
• Enhancement- Mode MOSFET Transistors
(IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>55W, ηT>35% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 330-400MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
北京京瑞馨科技--供应全新原装正品射频模块、射频管！假一罚十！！！
联系人：何先生
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网址：www.jrx-tech.com
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全新原装正品供应：
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