英飞凌K25H1203|IKW25N120H3
发布者:dizai 发布时间:2011/8/12 13:46:04

K25H1203|IKW25N120H3 特点:
•最高结温度为175℃
•非常低VCEsat
•低开关损耗
•较高的开关坚韧性
•内置快速恢复反并联二极管
根据JEDEC1合格为目标
•无铅引脚电镀符合RoHS标准
应用范围:
•UPS(不中断电源/不间断电源)
•焊接器
•太阳能发电用逆变器
英飞凌K25H1203|IKW25N120H3 完美替代K25T120 (IKW25T120)|K25T1202 (IKW25N120T2) IGBT单管
 
英飞凌K25H1203|IKW25N120H3是英飞凌第三代1200V高开关速度IGBT单管, 能够完美替代K25T120|K25T1202 ,专用于焊接、太阳能发电逆变器和UPS等IGBT高频应用领域。
 
K40H1203( IKW40N120H3)|K40T120 (IKW405T120)|K40T1202 (IKW40N120T2) 参数比较说明:
Type
VCE
IC
VCE(sat)
Tvj=
5°C
Tvj
(max)
Marking
Package
IKW25N120H3
1200V
25A
2.05V
175°C
K25H1203
PG-TO247-3
IKW25N120T2
1200V
25A
1.75V
175°C
K25T1202
PG-TO247-3
IKW25T120
1200V
25A
1.7V
150°C
K25T120
PG-TO247-3
 
K25H1203( IKW25N120H3)|K25T120 (IKW25T120)|K25T1202 (IKW25N120T2) 最大额定值比较说明:
Parameter
Symbol
Value
Unit
K25H1203
K25T1202
K25T120
Collector-emitter voltage
VCE
1200
1200
1200
V
DC collector current
TC = 25°C
TC = 100°C
IC
50
25
50
25
50
25
A
Pulsed collector current, tp limited by Tjmax
ICpul s
100
100
75
Turn off safe operating area
VCE 1200V, Tj 150°C
-
100
100
75
Diode forward current
TC = 25°C
TC = 100°C
IF
25
12
40
25
50
25
Diode pulsed current, tp limited by Tjmax
IFpul s
100
100
75
Gate-emitter voltage
VGE
±20
±20
±20
V
Short circuit withstand time2)
VGE = 15V, VCC 1200V, Tj 150°C
tSC
10
10
10
us
Power dissipation
TC = 25°C
Pt ot
326.0
156.0
349
190
W
Operating junction temperature
Tj
-40...+175
-40...+175
-40...+150
°C
Storage temperature
Tstg
-55...+150
-55...+150
-55...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Wavesoldering only, temperature on leads only
-
260
260
260
Mounting torque,M3 screw
Maxim of mounting processes:3
M
0.6
-
-
Nm
 



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