4 Amps, 900 Volts N-CHANNEL POWER MOSFET

DESCRIPTION

The UTC 4N90 is a N-channel enhancement MOSFET adopting

UTC’s advanced technology to provide customers with DMOS,

planar stripe technology. This technology is designed to meet the

requirements of the minimum on-state resistance and perfect

switching performance. It also can withstand high energy pulse in

the avalanche and communication mode.  

   The UTC 4N90 is particularly applied in high efficiency switch

mode power supplies.  

FEATURES

* VDS=900V

* ID=4A

* RDS(ON)=4.2Ω @ VGS=10V

* Typically 17nC low gate charge

* High switching speed

* Typically 5.6pF low CRSS  

* 100% avalanche tested

* Improved dv/dt capability